ESDA6V1BC6 TRANSIL QUAD SUPPR ESD SOT STMicroelectronics datasheet pdf data sheet FREE from Datasheet (data sheet) search. ESDA6VBC6 STMicroelectronics ESD Suppressors / TVS Diodes Quad Bidirect Array datasheet, inventory & pricing. ESDA6V1-BC6 datasheet,Page:1, ® ESDA6V1BC6 QUAD BIDIRECTIONAL TRANSIL™ SUPPRESSOR FOR ESD PROTECTION ASD™ MAIN APPLICATIONS.
|Genre:||Health and Food|
|Published (Last):||4 July 2013|
|PDF File Size:||14.47 Mb|
|ePub File Size:||2.70 Mb|
|Price:||Free* [*Free Regsitration Required]|
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Bf6 protection is achieved by clamping the unwanted overvoltage. Peak power dissipation versus initial junction temperature. Figure A8 shows that in such a condition, i.
Analog crosstalk measurements 50?
PJEC3V3M1FN2 – Bidirectional ESD protection of one line
For these kind of disturbances it clamps close to ground voltage as shown in Fig. The perturbed line will be more affected if it works with low voltage signal or high load impedance few k? Digital crosstalk measurements configuration Figure A7 shows the measurement circuit used to quantify the crosstalk effect in a classical digital application.
In usual frequency range of analog signals up to MHz the effect on disturbed line is less than dB. Capacitance versus reverse applied voltage typical values. This part of the VG1 signal represents the effect of the crosstalk phenomenon of the line 1 on the line 2. It is also important to note that in this approximation the parasitic inductance effect was not taken into account. No data disturbance was noted on the concerned line.
This phenomenon has to be taken into account when the drivers impose fast digital data or high frequency esda61 signals in the eda6v1 line.
The measurements performed with falling edges give an impact within the same range. Peak forward voltage drop versus peak forward current typical values. Application Specific Discretes A. A3 the high efficiency of the ESD protection: This publication supersedes and replaces all information previously supplied. Relative variation of leakage current versus junction temperature typical values.
Specifications mentioned in this publication are subject to change without notice. By taking into account the following hypothesis: Typical analog crosstalk measurements Analog crosstalk dB 0 1 10 frequency MHz 1, Figure A5 gives the measurement circuit for the analog crosstalk application.
A3a and -Vf negative way, Fig. Remaining voltage during ESD surge a: No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.
The clamping voltage is given by the following formula: However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.