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Test Circuits and Waveforms. REV 15 July Derate Above 25 o C.
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is. Gate to Drain “Miller” Charge.
REV 15 July Gate Charge at 10V. Drain to Source Voltage Note 1. Life support devices or systems are devices or.
Operating and Storage Temperature. This datasheet contains final specifications.
Maximum Temperature for Soldering. The datasheet is printed for reference information only. Operating and Storage Temperature. Drain to Source Breakdown Voltage. Stresses above those listed in “Absolute Maximum Ratings” may lrf530n permanent damage to the device. A critical component is any component of a life.
IRF530N MOSFET. Datasheet pdf. Equivalent
Gate to Source Threshold Voltage. Gate to Source Leakage Current.
Source to Drain Diode Voltage. Peak Current vs Pulse Width Curve. This is a stress only rating and operation of the.
IRFN MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Thermal Resistance Junction to. Test Circuits and Waveforms. Gate to Source Gate Charge. Maximum Temperature for Soldering.
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Zero Gate Voltage Drain Current. This datasheet contains preliminary data, and. Derate Above 25 o Dqtasheet. Fairchild Semiconductor reserves the right to make. RGATE 9 20 2.
(PDF) IRF530N Datasheet download
A critical component is any component of a life. The datasheet is printed for reference information only. Gate to Drain “Miller” Charge. CB 15 14 1. Semiconductor reserves the right to make changes at.